| PART |
Description |
Maker |
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| IRG4PH40KDPBF IRG4PH40KDPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSUALATED GATE BIPOLAR TRANSISTOR WITH YLTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| EMX28 |
Low frequency transistor, complex (2-elements) Bipolar Transistor
|
ROHM[Rohm]
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
